POLARIZED ELECTRON BEAM GENERATING ELEMENT

摘要

PURPOSE:To improve the takeoff efficiency by making the polarized electrons generated by a semiconductor photoelectric layer move easily to the surface side. CONSTITUTION:The doping amount of the Zn to the second semiconductor 16 as a semiconductor photoelectric layer is reduced continuously as coming from the inner side to the surface 18. As a result, the carrier density near the interface with the first semiconductor 14 at the innermost side is made about 1X10<19> (cm<-3>), and the carrier density near the surface 18 is made about 5X10<17> (cm<-3>), and the energy level of the conductive belt is reduced gradually as approaching the surface 18.