BUILT-IN INTEGRATED CIRCUIT IN PSD

摘要

PURPOSE:To obtain a built-in integrated circuit in a PSD, wherein a bipolar integrated circuit and the PSD are formed on the same substrate. CONSTITUTION:An epitaxially grown second-conductivity type low-concentration (N<2>) semiconductor layer 5 is provided on a first-conductivity type high- concentration (P<+>) semiconductor substrate 4. A PSD is formed of the first- conductivity tape high-concentration substrate 4, a second-conductivity type high-concentration (N<+>) embedded layer 7, which is formed in the second- conductivity type epitaxial layer 5 and a first-conductivity type high- concentration (P<+>) isolation diffused layer 6, which is formed on the second- conductivity high-concentration layer 7. Thus, the PSD can be formed on the same substrate as a bipolar integrated circuit, and the mounting area can be reduced.