A method for producing a semiconductor substrate having a semiconductor film (2) formed on a semiconductor substrate body (10) over an insulating film (1) has the following steps: preparation of a semiconductor substrate (10) having a front surface and a rear surface arranged lying opposite the front surface; formation of a first insulating film (1), of a first semiconductor film (2) and of a second insulating film (3) on the semiconductor substrate successively in this order; formation of strip-shaped second semiconductor films (2) having a predetermined width on the second insulating film (3) periodically at predetermined intervals, and covering of the second semiconductor films (7) with a third insulating film (8); carrying out a zone-melting recrystallization of the first semiconductor film (2) along a strip direction of the strip-shaped second semiconductor film (7), starting from one end of the substrate (10) as far as an end line there opposite; etching off the third insulating film (8) and sections of the second insulating film (3) with remaining sections which are arranged between the first semiconductor film (2) and the second semiconductor film (7); oxidation of the second semiconductor film (7) and of the first semiconductor film (2) which are uncovered by the etching process; and etching off the second insulating film (3) which remains after the etching process. <IMAGE>
