| 摘要 |
<p>PURPOSE:To enable an static induction transistor to be prevented from deteriorating in yield due to the warpage of an electrostatic body isolating substrate and enhanced in performance by a method wherein a control circuit device is composed of 21 P-channel static induction transistor and a resistor connected between its source and gate. CONSTITUTION:Lateral double-diffusion MOSFETs 15 and 16 are used as an output semiconductor device, wherein a source is used in common, and two drain terminals are provided so as to make a two-way induction. A control circuit device composed of a P-channel static induction transistor 14 and a resistor 13 between its source and gate and the two-way conduction lateral double diffusion MOSFETs 15 and 16 are formed on a single semiconductor substrate 21 as integrated through a PN junction isolation. As mentioned above, the static induction transistor 14 and the output MOSFETs 15 and 16 are formed into a single chip usirxg a single crystal silicon substrate free from warpage, so that a mask alignment operation can be improved in accuracy, a window of fine dimensions can be provided by working, and a semiconductor relay of this constitution can be improved in sensitivity properties.</p> |
