发明名称 POWER SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To enhance a heat-dissipating property and to reduce a thermal resistance in a power semiconductor device. CONSTITUTION:In a power semiconductor device, a light-emitting element 13 which converts an electric signal into light, a photodetector 14 which converts the light from the light-emitting element 13 into an electric signal and a triac element 15 which is connected to the photodetector 14 are provided, and they are sealed with a resin. In the power semiconductor device, the light-emitting element 13 and the photodetector 14 are sealed with a light-transmitting resin 16, and the light-transmitting resin 16 and the triac element 15 are sealed with a light-shielding resin 17 whose thermal conductivity is high.</p>
申请公布号 JPH06275863(A) 申请公布日期 1994.09.30
申请号 JP19930065034 申请日期 1993.03.24
申请人 SHARP CORP 发明人 FUJIWARA SUSUMU
分类号 H01L23/29;H01L23/31;H01L23/48;H01L31/12;(IPC1-7):H01L31/12 主分类号 H01L23/29
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