| 摘要 |
<p>Enhanced quality thin films of Cuw(In,Gay)Sez for semiconductor device applications are fabricated by initially forming a Cu-rich, phase-separated compound mixture comprising Cu(In,Ga):CuxSe on a substrate (12) to form a large-grain precursor (20) and then converting the excess CuxSe(18) to Cu(In,Ga)Se2 by exposing it to an activity of In (22) and/or Ga, either in vapor In and/or Ga form or in solid (In,Ga)ySez. Alternatively, the conversion can be made by sequential deposition of In and/or Ga and Se onto the phase-separated precursor (20). The conversion process is preferably performed in the temperature range of about 300-600°C, where the Cu(InGa)Se2 (16) remains solid, while the excess CuxSe (18) is in a liquid flux. The characteristic of the resulting Cuw(In,Ga)ySez can be controlled by the temperature. Higher temperatures, such as 500-600°C, results in a nearly stoichiometric Cu(In,Ga)Se2, whereas lower temperatures, such as 300-400°C, results in a more Cu-poor compound, such as the Cu2(In,GA)4Se7 phase.</p> |
