| 摘要 |
<p>PURPOSE:To realize the liquid crystal display having an excellent pixel holding characteristic by decreasing the off-leak currents of thin-film transistors(TFTs) with simple stages. CONSTITUTION:Only the Nch TFTs in the regions of L<off> from the ends of gate electrodes are selectively made into an LDD structure by remaining a gate insulating film and implanting ions thereto. The off-leak currents of the pixel switching TFTs and the soaring up of the off-leak currents are decreased. Consequently, the liquid crystal display which lessens flickering and unequal display and has the excellent pixel holding characteristic is realized. Photolithographic stages are not increased.</p> |
