发明名称 NONLINEAR RESISTANCE ELEMENT AND ITS PRODUCTION
摘要 <p>PURPOSE:To decrease both of changes in current-voltage characteristics with lapse of time and polarity differences by incorporating rhenium atoms into a metal oxide layer essentially consisting of tantalum atoms and oxygen atoms. CONSTITUTION:A lower side electrode layer 102 in common use as the bus line of a liquid crystal display device is formed on a glass substrate 101. This lower side electrode layer 102 consists of the electrode formed by adding a slight amt. of the rhenium into tantalum. The metal oxide layer 103 obtd. by anodically oxidizing the lower side electrode itself and further the upper electrode layer 104 are successively formed on the lower layer side electrode 102, by which a nonlinear resistance element of a metallic layer-metal oxide layer- metallic layer is formed. The rhenium atoms of the metal oxide layer 103 are substd. with the tantalum atoms in the tantalum oxides and are act as donors by covalent bonding or ion bonding with oxygen atoms. The effect of limiting the boundary current between the metallic layer and the metal oxide layer is thus suppressed and the current value on the low electric field side is increased.</p>
申请公布号 JPH06301061(A) 申请公布日期 1994.10.28
申请号 JP19930088871 申请日期 1993.04.15
申请人 SEIKO EPSON CORP 发明人 INAMI TAKASHI
分类号 G02F1/136;G02F1/1365;H01L49/02;(IPC1-7):G02F1/136 主分类号 G02F1/136
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