FORMATION OF SEMICONDUCTOR QUANTUM BOX

摘要

PURPOSE:To prevent damage to the junction boundary between a quantum box and an electron supplying layer deposited thereon, and enhance the accuracy of machining quantum boxes themselves. CONSTITUTION:A semiconductor layer 2 of AlAs and a semiconductor layer 3 of GaAs are formed on each terrace of an inclined substrate 1 of GaAs by lateral growth to form an AQAs/GaAs superlattice structure. A semiconductor layer 5 of n-AlGaAs to be an electron supplying layer is grown to cover the entire surface of these semiconductor layers 2 and 3. The semiconductor layer 5 is then patterned, and the semiconductor layer 3 is selectively etched using the patterned semiconductor layer 5 as a mask to form a quantum box.