| 摘要 |
PURPOSE: To lower the cost by forming an image, using an apparatus essentially suited to form a diffraction limit infrared image; the apparatus being at least a part of a device given on a detecting means including infrared sensitive regions in a specified acquisition time. CONSTITUTION: In a semiconductor process including a testing step of determining the temp. distribution on the surface of a device to which an energy is given, the temp. distribution is determined by forming an essential diffraction limit real time infrared(IR) image of the device, using means 23 including a multi-pixel IR detection array. In an apparatus for forming the IR image, the IR image is formed actually, using an IR image former 22 capable of forming a thermal image in an acquisition time of less than 0.1 sec at a high temp. resolution (e.g.ΔT<=0.01 deg.C) in essentially real at an essentially diffraction limit (e.g. spatial resolution of 5μm for radiation in a wavelength range of 3-5μm).
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