| 摘要 |
<p>PURPOSE:To decrease the coupling capacities between a counter electrode and signal lines and to suppress crosstalks by forming the signal lines on the same layer as the layer of gate electrodes and forming scanning lines on the same layer as the layer of source and drain electrodes. CONSTITUTION:The scanning lines 1 and the signal lines 2 are intersected and are arranged like a grid on a light transparent insulating substrate 7, such as glass plate. A TFT array having the gate electrodes 4 formed on an insulating substrate 7 near the respective intersected points of these scanning lines 1 and signal lines 2, island-shaped amorphous silicon films 10 formed via insulating films 8 on the gate electrodes 4 and the source electrodes 9 and drain electrodes 3 formed on the surface inclusive of the amorphous silicon films 10 is constituted. The TFT substrate is constituted by connecting the drain electrodes 3 of the TFTs to the signal lines 2 formed on the same layer as the layer of the gate electrodes 4 via contact holes 6 formed in the insulating films 2, connecting the gate electrodes 4 to the scanning line 1 formed on the same layer as the layer of the source electrodes 9 and the drain electrodes 3 and connecting the source electrodes 9 to pixel electrodes 5.</p> |
