| 摘要 |
<p>PURPOSE:To overlap a ground line a and a bit line on a semiconductor layer as an active layer and enhance the degree of integration by making the area of a memory cell small. CONSTITUTION:The upper layer and the lower layer of a Si layer 44 as the active layer of a transistor 16 for memory cell are extended the AlSiCu film 72 and Ti/TiN/Ti film 71 as the bit line and the tungsten polyside film 38 as the ground line. The ground line is connected to the source 14 of the transistor 16 through an impurity region 64 provided through the Si layer 44 and the bit line is connected to the drain 15 of the transistor 16 through a contact hole 62.</p> |
