| 摘要 |
<p>PURPOSE:To prevent fluctuation in the threshold voltage of a memory cell under nonselected state during the electron extracting operation. CONSTITUTION:MOS transistors 1, 2 are formed in parallel with a plurality of memory cells connected between the data line and the source line of a memory array comprising nonvolatile memory cells arranged in matrix. When electrons are extracted, the source line or the data line is precharged through MOS transistors 1, 2.</p> |
