发明名称 |
Method of preparing Tl-containing oxide superconducting thin film |
摘要 |
Provided herein is a method of efficiently preparing a thin film having a higher critical temperature as to an oxide superconducting material containing Tl. A thin film of an oxide containing Tl is formed and then heat treated at a temperature of about 850 DEG to 950 DEG C. for a short time, and thereafter further heat treated at a temperature, which is lower than the preceding heat treatment temperature, of at least about 750 DEG C. for a long time. The thin film is heat treated in an atmosphere having an oxygen partial pressure of not more than about 0.1 atm. In formation of a Tl superconducting thin film, on the other hand, a 1212 phase layer is reacted with an amorphous Ca-Cu-O layer to form a 1223 phase layer, or a layer containing volatile metal elements (Tl, Bi and Pb, for example) and oxygen is reacted with another layer containing other elements than the volatile metal elements to form a superconducting film having a high critical temperature.
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申请公布号 |
US5376627(A) |
申请公布日期 |
1994.12.27 |
申请号 |
US19930026915 |
申请日期 |
1993.03.05 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TORII, YASUKO;HASEGAWA, KATSUYA;TAKEI, HIROMI |
分类号 |
H01L39/24;(IPC1-7):B05D5/12 |
主分类号 |
H01L39/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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