THIN-FILM DIODE AND ITS PRODUCTION

摘要

PURPOSE:To provide the thin-film diode which has good step coverage, is free from current leakage and has high stability at the time of forming a protective insulator layer on a nonlinear resistance layer and the method for producing such diode. CONSTITUTION:This thin-film diode is constituted by successively laminating a first electrode layer 11, the nonlinear resistance layer 12, an intermediate electrode layer 13, the protective insulator layer 15 partly provided with a contact hole 16 and a second electrode layer 17 connecting to an intermediate electrode layer 13 via the contact hole 16 on an insulating substrate 1. The thin-film diode is constituted by forming the intermediate electrode layer 13 with an area smaller than the area of the front surface of the nonlinear resistance layer 12. A photoresist 14 used for patterning of the intermediate electrode layer 13 is softened and expanded by a heat treatment and the nonlinear resistance layer 12 is patterned by using this photoresist 14 at the time of producing the diode described above.