发明名称 |
Verfahren zum Herstellen von hochohmigem Siliziumkarbid |
摘要 |
PCT No. PCT/EP94/02400 Sec. 371 Date Apr. 12, 1996 Sec. 102(e) Date Apr. 12, 1996 PCT Filed Jul. 21, 1994 PCT Pub. No. WO95/04171 PCT Pub. Date Feb. 9, 1995A process for producing high-resistance SiC from low-resistance SiC starting material. The flat (shallow) donor levels of a prevailing nitrogen impurity are overcompensated by admixture of a trivalent doping element with the concentration of the doping element in the SiC being such that it changes the conductivity type from a n-conductivity to a p-conductivity. In addition, a transition element is added having donor levels approximately in the middle of the SiC energy gap, so that the excess acceptor levels are in turn compensated and a high specific resistance is achieved. |
申请公布号 |
DE4325804(A1) |
申请公布日期 |
1995.02.02 |
申请号 |
DE19934325804 |
申请日期 |
1993.07.31 |
申请人 |
DAIMLER-BENZ AKTIENGESELLSCHAFT, 70567 STUTTGART, DE;FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V., 80636 MUENCHEN, DE |
发明人 |
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分类号 |
C30B29/36;C30B23/00;C30B23/02;H01L21/04;H01L21/322;H01L29/161;H01L29/24;H01L29/38 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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