| 摘要 |
<p>PURPOSE:To provide a liquid crystal display device with which the number of production stages and particularly the number of photolithography stages are reduced by continuously forming both of semiconductor layers of TFTs and pixel electrodes of polysilicon. CONSTITUTION:A first insulating substrate 1 is provided thereon with a light shielding film 3 consisting of chromium, etc., between insulating films 2a and 2b consisting of silicon oxide, etc. Further, a polysilicon film 4 is formed not only in the TFT parts but continuously to pixel parts as well and is commonly used as the pixel electrodes 4d. Further, gate insulating films 5 and gate electrodes 6 are laminated. High concn. impurity regions 4a, 4b are formed by ion implantation on both sides of the gate electrodes 6 on the polysilicon film 4 and are formed to a conduction type of an n type or p type. The pixel electrode parts are similarly formed as the high-concn. impurity regions at this time. The semiconductor layers and pixel electrodes of the TFTs 10 constituted in such a manner are continuously formed of the polysilicon of the same material and are, therefore, formed by the same stage. The photography stages are thus decreased.</p> |
