| 摘要 |
PURPOSE:To manufacture a superluminescent diode device having a high power and high reliability by a simple manufacturing process, at a low cost and with a high yield. CONSTITUTION:A (m11) face 1b (wherein (m) denotes a positive integer not smaller than 2) which continues to a (100) face 1a is formed on the current non-injected region 18 of a semiconductor substrate 1. Semiconductor layers including a cladding layer 2, an active layer 3 and a cladding layer 4 are built up on the (m11) face 1b by an MBE(molecular beam epitaxy) method at a predetermined substrate temperature. The active layer 3 is built up on an excited region 19 at a predetermined growth speed but, on the other hand, it is not built up or is built up only slightly on the slope 1b of the current non-injected region 18. Thus, the edge part of the active layer 3 on the boundary between the excited region 19 and the current non-injected region 18 is made to face a window part 4a. A reference numeral 15 denotes a stripe-shaped trench which is a current constriction part. |
