发明名称 |
METHOD FOR PRODUCING PHOTODETECTOR ISOLATION IN IMAGE SENSORS |
摘要 |
Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench. |
申请公布号 |
HK1172731(A1) |
申请公布日期 |
2016.11.11 |
申请号 |
HK20120113371 |
申请日期 |
2012.12.25 |
申请人 |
豪威科技股份有限公司;豪威科技股份有限公司 |
发明人 |
DOAN, HUNG Q. Q;STEVENS, ERIC G. G;GUIDASH, ROBERT M. M |
分类号 |
H01L |
主分类号 |
H01L |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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