| 摘要 |
<p>PURPOSE:To prevent the nibbling of a gate electrode and a wiring pattern edge part, by forming a second layer of molybdenum so as to cover a first layer which is etched and formed by using aluminum or aluminum alloy, and forming a third layer composed of high melting point metal. CONSTITUTION:An aluminum film is deposited on a glass substrate 1. The gate electrode and the wiring 2 of a first layer are formed by photolithography and etching after deposition. A molybdenum film is deposited so as to cover the gate electrode and the wiring 2 of the first layer. A molybdenum tantalum alloy film wherein resistance to chemicals is large and melting point is high is laminated on the molybdenum film, and the gate electrode and the wiring 3 of a second layer and the gate electrode and the wiring 16 of a third layer are formed at the same time. Thereby the blister of aluminum or aluminum alloy of the first layer which is to be caused by the heat at the time of forming a gate insulating film can be prevented, on account of stress relieving action of the second layer molybdenum.</p> |
