Reverse conducting gate turn off thyristor.

摘要

A reverse conducting gate-turnoff thyristor comprising a switching device section (A), a diode section (B) and an isolation section (C). The section (C) isolates the sections (A and B) and has an impurity layer (102c) formed by controlling impurity diffusion and having an impurity concentration of a first conductivity type lower than those of the sections (A and B). Other means of insulation are regions of a second conductivity type (3,13,23,210), that may contain regions of the first conductivity type (20) and be covered by insulating layers (4,5) and a resistive layer (21).