Electro-luminescent material, solid state electro-luminescent device and process for fabrication thereof.

摘要

An electro-luminescent material and solid state electro-luminescent device comprising a mixed material layer (3) formed of a mixture of silicon and silicon oxide doped with rare earth ions so as to show intense room-temperature photo- and electro-luminescence. The luminescence is due to internal transitions of the rare earth ions. The mixed material layer has an oxygen content ranging from 1 to 65 atomic % and is produced by vapor deposition and rare earth ions implant. A separated implant with elements of the V or III column of the periodic table of elements gives rise to a PN junction (3,4). The so obtained structure is then subjected to thermal treatment in the range 400-1100 DEG C.