| 摘要 |
<p>PURPOSE:To enhance the transfer accuracy and the throughput of the pattern transfer method by preventing an increase in the division number of pattern formation regions on a mask while the resolution of a charged particle beam which is irradiated at the mask is being maintained at a definite value or higher. CONSTITUTION:In a pattern transfer method, the deflection amount delta x from the optical axis A of a charged particle beam is changed, a plurality of pattern formation regions which are formed side by side in the x-direction on a mask 18 are irradiated with the charged particle beam EB, and patterns in the individual pattern formation regions are transferred sequentially onto a wafer 5. In the pattern transfer method, the width in the x-direction of the plurality of pattern formation regions which are set on the mask 18 is changed so as to be large in the pattern formation regions in which the distance from the position of the optical axis of the charged particle beam EB is small, and it is changed so as to be small in the pattern formation regions in which the distance is large. In addition, the irradiation width in the x-direction of the changed particle beam with reference to the mask 18 is adjusted so as to match the width in the x-direction of the individual pattern formation regions.</p> |
