| 摘要 |
PURPOSE:To provide such a photoresist compsn. having high resolution property with which a resist pattern excellent in the cross-sectional form and heat resistance can be formed, having high sensitivity, excellent characteristics for the focus depth range and excellent halation preventing effect, enough allowance for exposure, and especially suitable for a substrate having a rugged pattern or high reflectance, especially suitable as a superfine machining resist in the production of semiconductor devices such as ICs and LSIs. CONSTITUTION:This positive photoresist compsn. contains (A) alkali-soluble resin, (B) ester compd. of naphthoquinone-1,2-diazide sulfonic acid and (C) 4,4'-bis(dialkylamino)benzophenon. The amt. of the component (C) is 0.1-1.0wt.% to the total solid content of the compsn. excluding the component (C). As for the component (A)component (B) and component (C), alkali-soluble novolac resin, an ester compd. with a polyhydroxy compd. and 4,4'-bis(diethylamino) benzophenone are preferable, respectively. |
