METHOD FOR GROWING EPITAXIAL THIN FILM OF ZINC- PHOSPHITE (Zn3P2) COMPOUNDS IN SEMICONDUCTOR CRYSTAL OF INDIUM PHOSPHITE (InP),申请号KR1019910016478-传众专利搜索

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发明名称	METHOD FOR GROWING EPITAXIAL THIN FILM OF ZINC- PHOSPHITE (Zn3P2) COMPOUNDS IN SEMICONDUCTOR CRYSTAL OF INDIUM PHOSPHITE (InP)
摘要
申请公布号	KR1019950006965(B1)	申请公布日期	1995.06.26
申请号	KR1019910016478	申请日期	1991.09.20
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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