| 摘要 |
<p>PURPOSE:To prevent an etching rate difference, an etched shape difference, and a local resist burning from occurring due to a temperature difference that happens in the plane of a wafer and between wafers when a dry etching process is carried out. CONSTITUTION:Wafer temperature monitoring sensors 10a to 10e are arranged on the wafer contacting spots of a lower electrode 3 on which a wafer 1 is placed and wafer clamps 2 which clamp the wafer 1, clamp actuating air cylinders 11a to 11d are so controlled as to increase or decrease the wafer clamps 2 in clamping force basing on the signals sent from the temperature monitoring sensors 10a to 10e, whereby a temperature difference in the plane of a wafer can be eliminated, and wafer cooling helium 4 controlled in flow rate by a mass flow controller 5 is made to flow over the wafer 1 to set it to a prescribed temperature.</p> |
