| 摘要 |
<p>PURPOSE:To provide an MISFET-type acceleration sensor where a movable electrode can be constantly maintained to be in parallel to a semiconductor substrate in MISFET-type acceleration sensor which can be miniaturized more easily than an electrostatic capacity type acceleration sensor. CONSTITUTION:A movable electrode consists of a mass 131 constituted by a lattice-shaped member and four beam parts 132 supporting it and gate electrodes 133a and 133b and also the beam parts 132 are fixed on P-type semiconductor substrate via an insulation film 12. Therefore, even if upper/lower and left/right acceleration is applied to the movable electrode, the movable electrode and the P-type silicon substrate can be maintained to be parallel constantly, thus setting the change in current flowing to fixed electrodes 15a and 16a (15b and 16b) to a desired value and hence detecting acceleration extremely accurately.</p> |
