| 摘要 |
<p>This invention aims at providing a semiconductor device for storing high precision multi-value and analog data by a simple construction and with low power consumption. In a semiconductor device having a plurality of memory cells of multi-value or analog data, the device of the invention includes data output lines for outputting the data of the memory cells, data input lines for transferring the data to the memory cells, data read control signal lines for controlling the data output from the memory cells to the data output lines and data write control signal lines for controlling data write from the data input lines to the memory cells. The memory cell has a first MOS transistor, the gate electrode of the first MOS transistor is connected to the input line through a second MOS transistor, the gate electrode of the second MOS transistor is connected to the data write control signal line, and the source electrode of the first MOS transistor is suitably connected to the data output line.</p> |
