发明名称 FUSE FOR INTEGRATED CIRCUIT
摘要 <p>PURPOSE: To blow a fuse at an extremely low voltage by forming the fuse by an extremely shallow NP semiconductor junction covered with metal which can be diffused into the semiconductor until the junction develops a short circuit when it is heated. CONSTITUTION: The top of a region 12 contacts a metal conductor 16 forming a fist terminal A of a fuse. Another metal conductor 18 electrically joined to an N-type well constitutes another terminal B of the fuse. Aluminum is used as the metal conductor 16. If a large current is applied to heat the metal conductor 16, aluminum in the metal conductor 16 is diffused in silicon to the junction of the region 12 and the N-type well 11. When a sufficient amount of aluminum is diffused, an NP junction substantially develops a short circuit to produce a state of fuse being blown. This can provide a simple fuse which can be blown by an extremely low voltage.</p>
申请公布号 JPH07221188(A) 申请公布日期 1995.08.18
申请号 JP19940321492 申请日期 1994.11.30
申请人 SGS THOMSON MICROELECTRON SA 发明人 RISHIYAARU FURUNERU;SERUJIYU FURIYUOO;FURANSOWA TERIE
分类号 B42D15/10;G06K19/07;G06K19/077;H01L21/82;H01L27/02;(IPC1-7):H01L21/82 主分类号 B42D15/10
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