Fabrication method of semiconductor devices and transparent mask for charged particle beam.

摘要

In a charged particle beam exposure apparatus comprising means (21-23) for generating a charged particle beam (20), deflection means (24) for deflecting the charged particle beam (20) electromagnetically and illuminating one small partition (28) of a plurality of small partitions (28) that constitute one aggregate partition (27) of a plurality of aggregate partitions (27) formed on a transparent mask (26); mask movement means for moving the transparent mask (26) mechanically, and reduction-exposure means (30-34) for reducing the charged particle beam (20) patterned through the mask (26) and for exposing the same on a semiconductor device (35) to be exposed, a method of fabricating a semiconductor device (35) comprises the steps of: moving one aggregate partition (27) of the plurality of aggregate partitions (27) into a predetermined position by the mask movement means; selecting one small partition (28) from among the plurality of small partitions (28) of the moved aggregate partition (27) by the deflection means (24); and reducing the selected small partition (28) and exposing the same on the semiconductor device (35) by the reduction-exposure means (30-34).