LOW-VOLTAGE FLASH EEPROM MEMORY CELL

摘要

PURPOSE: To effectively operate the memory at a low voltage level by providing a memory array which can be electrically erased and programmed and operating it so as to be programmed via the Fowler-Nordheim tunneling at only one of both sides of a channel forming the channel programming side. CONSTITUTION: An NXM-bit EEPROM array 10 includes a memory array 24 which can be electrically erased and programmed, and the array 24 is connected for programming to a common line 28 via the Fowler-Nordheim tunneling at only one of both side of a channel forming the channel programming side. Then a flash write circuit electrifies negatively the floating gates of all a symmetrical transistors. Every transistor selects an erased state for the bit-wide programming by removing selectively its electric charge. Thus, a memory operates at a low voltage level.