FABRICATION OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide a method for forming a thin film transistor in a liquid crystal display in which the contact resistance between an a-Si layer and an ITO film is lowered and the opening rate is increased while simplifying the process. CONSTITUTION:The method for fabricating a semiconductor device comprises a step for forming an insulating film 27b on a semiconductor layer 26a, and a step for exposing the semiconductor layer 26a to a low energy plasma containing one conductivity type impurities and to a high energy plasma gas containing one conductivity type impurity to form superposed shallow and deep impurity introduced layers in the semiconductor layer 26a on the opposite sides of the insulating film 27b.