| 摘要 |
<p>PURPOSE:To write without affecting adverse influence to other block by setting an electrode potential of a cell transistor(TR) to a non-selected block to a predetermined value at the time of writing a selected memory cell block, and applying an erroneous write suppression voltage. CONSTITUTION:An erase block 14A corresponding to a divided memory cell block 13A is selected, and the block 13A is written. In this case, drain and source electrodes of floating gate type cell TRs 1aaB-1cdB of a non-select memory cell block 13B are set to the same potential via a control signal forming circuit 12B of the block 14B and a source-drain short-circuiting circuit 15B, and an erroneous write suppression voltage is supplied to the source voltage via a source voltage controller 11B of the block 14B. Thus, the memory cell block can be written for a long period without affecting adverse influence to the other non-select memory cell block.</p> |
