发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF |
摘要 |
forming a trench in the semiconductor substrate; forming the second electrode by filling the some parts of the trench; forming the first electrode by surrounding the trench; forming a capacitor, composed of a dielectric layer between the first electrode and the second electrode; and forming a polycrystalline silicon layer in the some parts of the trench.
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申请公布号 |
KR950011638(B1) |
申请公布日期 |
1995.10.07 |
申请号 |
KR19920003727 |
申请日期 |
1992.03.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, BYONG - RYOL;CHOE, SU - HAN |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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