STRUCTURE OF DRAM CELL AND FABRICATING METHOD THEREOF

摘要

forming a number of word line by limitting a field region; forming a trench between the word lines of the active region; forming the first impurity diffusion region and the second impurity diffusion region in the internal wall of trench; forming an insulating layer in the side wall of each word line and the trench; forming a storage node mask or a capacitor along the trench of the second impurity diffusion region; and forming a bit line contact in the active region of the second impurity diffusion region.