| 摘要 |
<p>PURPOSE:To provide a light emitting diode of a higher luminance and its manufacturing method, without being restricted by size or material. CONSTITUTION:Concerning to the construction of a light emitting diode 10, a light emitting region (light emitting layer) 13 composed of n-type and p-type semiconductor layers 13N and 13P is formed along the main surface or light taking-out surface 12a and the side surfaces 12c, 12c,... of an n-type substrate 12. And a first ohmic electrode 14A is formed along the peripheral part of the light taking-out surface 12a. On the other hand, a second ohmic electrode 14B is formed on the rear 12b of the substrate 12. On the occasion of its manufacture, grooves are formed into a lattice shape in the main surface of the semiconductor substrate 12, and on all the surfaces over them an n-type semiconductor layer 13N and a p-type semiconductor layer 13P are epitaxially grown successively. After first and second electrodes 14A and 14B are formed, the substrate 12 is split along the grooves to obtain individual elements.</p> |
