| 摘要 |
<p>PURPOSE:To provide a manufacturing method of an improved semiconductor device which reduces process induced defects like surface OSF and can contribute to the improvement of electric characteristics of a semiconductor device. CONSTITUTION:A thermal oxide film 2 is formed on a semiconductor substrate 1. After that, a nitride film 3 is formed, and middle temperature heat treatment is performed at a temperature higher than or equal to 600 deg.C and lower than or equal to 1000 deg.C. At this time, interstitial oxygen concentration can be reduced. Ion implantation or the like is performed as a well region forming process, and a drive-in process with high temperature heat treatment is performed. Ion implantation quantity at this time is set lower than or equal to 9X10<13>/cm<2>, and heat treatment temperature or treatment time is reduced. After that, an element isolation layer forming process is performed, and a gate oxide film, a gate electrode, a source/drain layer, a CVD oxide film, a contact hole and a metal wiring are formed.</p> |
