发明名称 BACKUP CIRCUIT FOR SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To provide a backup circuit for the semiconductor memory which securely backs up the semiconductor memory even when the semiconductor memory is used while its power supply time is short or the power-supply frequency is low. CONSTITUTION:The power source is connected to the anode of a diode 3, whose cathode is connected to a supercapacitor 7 through a protection resistor 6. The cathode is further connected to one input of a power source switch 2. A backup primary battery 56 is connected to the other input of the power source switch 2. When the voltage of the power source input is high, the cathode-side input of the diode 3 becomes the output of the power source switch 2, but when the voltage is low, the primary battery 5 becomes the output of the power source switch 2. The output of the power source switch 2 is connected to the semiconductor memory. If the power source input voltage drops, the diode 3 disconnects the power source input and supercapacitor 7 from each other first and the source voltage is held by the capacity accumulated in the supercapacitor 7.</p>
申请公布号 JPH07271681(A) 申请公布日期 1995.10.20
申请号 JP19940057600 申请日期 1994.03.28
申请人 NEC CORP 发明人 YAMAMOTO SHUNICHI
分类号 G06F1/26;G06F12/16;G11C11/413;H01G9/28;(IPC1-7):G06F12/16 主分类号 G06F1/26
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