| 摘要 |
<p>PURPOSE:To obtain a nonvolatile semiconductor storage device in which the load at the time of raising a voltage is reduced by preventing leakage currents tram control gate lines or bit lines whose voltages are raised to a high voltage at the time of erasing data and at the time of a program which generated by the fact that Y gate transistors are consisting of transistors having low threshold values. CONSTITUTION:In the period of the data program, an I/O line level setting transistor T81 is turned ON to make an I/O on the I/O line an H level and then Y gate transistors T71, T72 are forcibly made OFF by being impressed with negative voltages in between sources and gates. Further, in the period of erasing data, a common control gate line CCGL is made to be the H level via a common control gate line setting buffer BF and then Y gate transistors T61, T62 are forcibly made OFF by being impressed with negative voltages in between sources and gates.</p> |
