| 摘要 |
PURPOSE:To make a field effect transistor be free from nonuniformity in transistor characteristics and have a low fringe capacity by making it have a space or the like constituted of polyimide and provided on the lateral side of a gate electrode with a silicon nitride film and a silicon oxide film interlaid. CONSTITUTION:This field effect transistor has a spacer 146a which is formed of a polyimide film, covers a part just above the end part of a high- concentration diffusion layer of the opposite conductivity type and is provided on the lateral side of a gate electrode 104 with a silicon nitride film 136 and a silicon oxide film 126 interlaid. Besides, it has a layer insulating film 110A covering the gate electrode 104 and source and drain regions 108 and 109. Contact openings reaching the source and drain regions 108 and 109 through the layer insulating film 110A, the silicon nitride film 136, the silicon oxide film 126 and a gate oxide film 103 are provided. Metal wirings are connected to the source and drain regions 108 and 109 through the contact openings. According to this constitution, a fringe capacity of the field effect transistor made minute can be reduced. |
