SEMICONDUCTOR FINS FOR FINFET DEVICES AND SIDEWALL IMAGE TRANSFER (SIT) PROCESSES FOR MANUFACTURING THE SAME

摘要

A method of forming a semiconductor structure includes providing a semiconductor substrate, forming at least one precursor semiconductor fin from the semiconductor substrate, etching through at least a portion of the at least one precursor semiconductor fin to form at least one patterned precursor semiconductor fin having a gap therein. The at least one patterned precursor semiconductor fin includes a first vertical surface and a second vertical surface with the gap therebetween. In addition, the method further includes forming a semiconductor material in the gap of the at least one patterned precursor semiconductor fin, in which the first vertical surface and the second vertical surface laterally surround the semiconductor material, and transforming the at least one patterned precursor semiconductor fin into at least one semiconductor fin including the semiconductor material therein.

主权项

1. A method of forming a semiconductor structure comprising:
providing a semiconductor substrate: forming at least one precursor semiconductor fin from the semiconductor substrate; etching through at least a portion of the at least one precursor semiconductor fin to form at least one patterned precursor semiconductor fin having a gap therein, wherein the at least one patterned precursor semiconductor fin includes a first vertical surface and a second vertical surface with the gap therebetween; forming a semiconductor material in the gap of the at least one patterned precursor semiconductor fin, wherein the first vertical surface and the second vertical surface laterally surround the semiconductor material; andtransforming the at least one patterned precursor semiconductor fin into at least one semiconductor fin including the semiconductor material therein, wherein the transforming of the at least one patterned precursor semiconductor fin into at least one semiconductor fin comprises:
performing a condensation process and anneal process on the semiconductor material in the gap of the precursor semiconductor fin, wherein the semiconductor material in the gap is a SiGe material having a germanium content of from 20 atomic % to 90 atomic %, wherein a first vertical sidewall and a second vertical sidewall of the precursor semiconductor fin comprise one of Si or SiGe having a germanium content of no greater than 10 atomic %, and wherein the first vertical sidewall and a second vertical sidewall of the at least one precursor semiconductor fin are converted by the condensation and annealing process to a same material as the SiGe material having a germanium content of from 20 atomic % to 90 atomic % located in the gap to form the at least one fin having an upper portion and a lower portion, wherein the upper portion of the at least one fin includes the SiGe material having a germanium content of from 20 atomic % to 90 atomic % from the gap and the lower portion of the at least one fin includes silicon or SiGe having a germanium content of no greater than 10 atomic %, and wherein the germanium content in the SiGe layer in the upper portion of the at least one semiconductor fin is uniformally distributed across the upper portion of the at least one semiconductor fin.