| 发明名称 |
PLASMA ETCHING DEVICE WITH DOPED QUARTZ SURFACES |
| 摘要 |
An apparatus for processing a substrate is provided. A processing chamber is provided. A substrate support for supporting the substrate is within the processing chamber. An edge ring is on the substrate support, wherein the edge ring comprises nitrogen free doped quartz with a dopant of either AlO and YO or a dopant of LaO. A gas inlet for providing gas into the processing chamber is above a surface of the substrate. At least one electrode provides RF power into the processing chamber. |
| 申请公布号 |
US2016365261(A1) |
申请公布日期 |
2016.12.15 |
| 申请号 |
US201615174091 |
申请日期 |
2016.06.06 |
| 申请人 |
Lam Research Corporation |
发明人 |
SANT Sanket |
| 分类号 |
H01L21/67;H01J37/32;H01L21/687 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus for processing a substrate, comprising
a processing chamber; a substrate support for supporting the substrate within the processing chamber; an edge ring on the substrate support, wherein the edge ring comprises nitrogen free doped quartz with a dopant of either AlO and YO or a dopant of LaO; a gas inlet for providing gas into the processing chamber above a surface of the substrate; and at least one electrode, for providing RF power into the processing chamber. |
| 地址 |
Fremont CA US |
