发明名称 |
Complementary junction heterostructure field-effect transistor |
摘要 |
A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.
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申请公布号 |
US5479033(A) |
申请公布日期 |
1995.12.26 |
申请号 |
US19940250088 |
申请日期 |
1994.05.27 |
申请人 |
SANDIA CORPORATION |
发明人 |
BACA, ALBERT G.;DRUMMOND, TIMOTHY J.;ROBERTSON, PERRY J.;ZIPPERIAN, THOMAS E. |
分类号 |
H01L27/06;H01L29/80;(IPC1-7):H01L31/037;H01L31/072 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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地址 |
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