发明名称 SEMICONDUCTOR DEVICE AND PRODUCTION PROCESS THEREOF
摘要 PURPOSE:To attain a high speed modulation and switching of an electric or optical signal by utilizing the phenomenon that electrons or light propagating in a thin semiconductor wire transfers one thin semiconductor wire to another. CONSTITUTION:Waveguides 118 and 119 are composed of two needle-like crystals solid crossing on a base board. For the waveguides made of GaAs, a buried layer 112 uses AlGaAs. Then electron input/output electrodes 113-116 and a control electrode 117 for switching flows of electrons are formed. Electrons entering the waveguide 118 from the electrode 113 partly transfer to the other waveguide 119 at a midway cross part during propagating on that waveguide. On the electrodes 115 and 116 an output of electrons is observed at a certain ratio. The ratio of electrons on these electrodes can be changed by a voltage applied to the electrode 117. Thus, high speed switching of electric or optical signals can be made.
申请公布号 JPH0823086(A) 申请公布日期 1996.01.23
申请号 JP19940154441 申请日期 1994.07.06
申请人 HITACHI LTD 发明人 HIRUMA TAKEYUKI;YAZAWA MASAMITSU;KATSUYAMA TOSHIO;SATO TOSHIHIKO;SHIRAI MASATAKA;HARAGUCHI KEIICHI
分类号 H01L29/06;H01L29/66;H01L29/80;(IPC1-7):H01L29/66 主分类号 H01L29/06
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