| 摘要 |
PURPOSE:To enable using a dip method of high productivity when a second epitaxial layer is grown, by introducing a step for forming a thin film on the uppermost layer surface of a first epitaxial layer, between a step for growing a first epitaxial layer containing a P-N junction and a step for forming a second epitaxial layer. CONSTITUTION:An N type AlGaAs clad layer 12 doped with Te, an P-type AlGaAs active layer 13 doped with Zn, and a P-type AlGaAs clad layer 14 doped with Zn are formed in this order on an N-type GaAs substrate 11 by a horizontal slide board method. A wafer is taken out from a slide board, and the surface is cleaned with sulfuric acid based etching solution. The wafer is dipped in 50% hydrofluoric acid at 25 deg.C for 20 minutes. A thick film layer 15 of AlGaAs is grown in a crucible of a vertical type dip furnace. The GaAs substrate 11 is eliminated, and an Au-Ge electrode 16 is formed on the clad layer 12. A plurality of Au-Zn electrodes 17 are formed on the surface of the thick film layer 15. |
