| 摘要 |
PURPOSE:To provide a device high in rectification property and stable in high voltage at open end by using a transparent oxide electrode of a single layer or composite layers of a tin oxide or indium - tin oxides, and a metallic oxide layer of a single layer of an indium oxide, a lead oxide, a titanium oxide, or the like or composite layers of these combination. CONSTITUTION:A glass substrate 10/ a tin oxide 11 is used as a substrate, and a metallic oxide layer 12, an i-type semiconductor layer 13, and an n-type semiconductor layer 14 are stacked on it in this order, and silver is used as an electrode 15. The transparent oxide electrode 11 consists of a single layer or composite layers of a lead oxide or indium-tin oxides, and the metallic oxide layer 12 consists of a single layer of an indium oxide, a lead oxide, a titanium oxide, a tungsten oxide, a nickel oxide, a copper oxide, a indium oxide, or composite layers of these combination. By such introduction of the specified metallic oxide layer 12 between the transparent oxide electrode 11 and the amorphous semiconductor layer 13, excellent properties can be gotten, such as that the rectification property is high and that the voltage at open end and the curve factor are extremely high. |
