| 摘要 |
PURPOSE: To provide the drive circuit device for the switching semiconductor device in which the upper limit of the operating frequency is improved. CONSTITUTION: The drive circuit device 1 for the switching semiconductor device differs from a conventional drive circuit device for the switching semiconductor device is that a PNP transistor(TR) 3 is provided and the other terminal of a resistive element 52 whose one terminal connects to an anode of a constant voltage diode 51 connects directly to a ground line 92. Thus, a collector of a PNP TR 72 connects directly to a collector of an NPN TR 61. A base of the PNP TR 3 connects to a connecting point between the resistive element 52 and the anode of the constant voltage diode 51 and its emitter connects to an output terminal 9d, and its collector is connected to a connecting point between the collector of the NPN TR 82 and the emitter of the PNP TR 62. |
