| 摘要 |
PCT No. PCT/SE95/01084 Sec. 371 Date Jun. 19, 1997 Sec. 102(e) Date Jun. 19, 1997 PCT Filed Sep. 22, 1995 PCT Pub. No. WO96/09534 PCT Pub. Date Mar. 28, 1996A gas sensing device having a semiconductor substrate, wherein the semiconductor substrate is covered by an insulator layer, on which an intermediate layer is formed, and subsequently covered by a gas sensing catalytic layer, wherein the intermediate layer and the catalytic layer are made of different materials. The gas sensing device may optionally have dispersed between the insulator layer and the intermediate layer a catalytic metal layer. The gas sensing device provides improved stability and speed of response, even when used at high ambient temperatures, such as temperatures found in combustion systems. A method for making the gas sensing device is also disclosed. |
