| 摘要 |
PURPOSE:To reduce beams projected near a vertical shift register, to inhibit charges generated in a vertical shift register region and to suppress a smear by forming a groove to the surface of a semicon-ductor substrate, burying a vertical shift register-gate electrode into the groove as much as possible and scaling-down a clearance between the vertical shift register-gate electrode and the surface of the semiconductor substrate. CONSTITUTION:A plurality of groups of photodiode sections 1, transfer gate regions 4, vertical shift register regions 2, channel stop regions 3 and vertical register transfer polysilicon electrodes 5 are integrated in parallel on a semiconductor substrate. A groove is shaped between to rows of the photodiode sections 1, the vertical shift register region 2, the transfer gate region 4 and the channel stop region 3 are formed to the substrate in the bottom of the groove, and the vertical register transfer polysilicon electrode 5 is buried into the groove through an oxide film 6 in the upper sections of the vertical shift register region 2 and the transfer gate region 4. According such element structure, beams projected near a vertical shift register are reduced, changes generated in the vertical shift register region are inhibited, and a smear is suppressed. |
