| 摘要 |
PURPOSE:To easily write/erase/read out any memory layer of a stereoscopic memory having a large capacity by laminating memory layers having an MOS structure, and altering a bias potential applied to an output electrode from each memory layer to write/erase/read out it. CONSTITUTION:When writing, an electron beam E is generated from an electron beam generation source EB, and deflected to a desired address by a deflecting electrode DE. The deflected beam E passes first/second memory layers M1/M2 laminated in two layers to generate charge pair of electrons and holes in all layers. Then, when erasing, the beam E is similarly deflected, and a bias potential of reverse polarity to that at the time of writing is applied to output electrode ER1 or ER2 to erase it. When reading out, the beam E is deflected, and a bias potential is applied to an n-type layer 3 and a p-type layer 4 of output electrode ER1 or ER2 for reading out a desired memory layer to read out desired data. |
